Qorvo Unveils 750V Silicon Carbide Field-Effect Transistors for Electric Vehicle Applications
Qorvo®, a leading provider of radio frequency (RF) solutions, today announced the release of its first 750V silicon carbide (SiC) field-effect transistor (FET), designed for high-voltage power conversion in electric vehicle (EV) applications.
The Qorvo UJ4SC075009B7S FET features innovative trench gate technology to deliver superior performance and reliability. The device has low on-resistance (RDS(on)) and high switching speed, which can improve efficiency and reduce power consumption. Additionally, the UJ4SC075009B7S FET has a wide safe operating area (SOA) for reliable operation in harsh conditions.
The UJ4SC075009B7S FET is suitable for a variety of EV applications, including:
- Electric vehicle chargers
- On-board inverters
- Motor drives
- Traction inverters
“Qorvo is committed to providing innovative, high-performance power solutions for the electric vehicle market,” said Alan Wu, general manager of Qorvo’s Automotive Products Division. “Our new 750V SiC FET will help our customers improve efficiency, reduce costs, and extend battery life.”
The UJ4SC075009B7S FET is available now. For more information, please contact a local Qorvo sales representative or visit the Qorvo website.
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- Authorized Qorvo distributor
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Visit the BonChip Electronic website to learn more about Qorvo products, including the UJ4SC075009B7S FET.
### About Qorvo
Qorvo is a leading provider of RF solutions, committed to providing customers with innovative, differentiated products and services. Qorvo's product portfolio includes RF front-end components, modules, and systems for mobile infrastructure, aerospace and defense, wireless connectivity, and the Internet of Things (IoT).
### Additional Resources
- QGA75V75S FET Datasheet: UJ4SC075009B7S Datasheet
- BonChip Electronic Website: Click here to learn more about UJ4SC075009B7S